MOSFET-800V 800V MOSFET. Status: In Production. View Datasheets View CAD Symbols Features: Power Semiconductors, Power Modules and RF Power MOSFETs Catalog; Eliminating Parasitic Oscillation between Parallel MOSFETs. ST's MDmesh high voltage and very high voltage MOSFETs with a breakdown voltage greater than 700 V offer a very low gate charge (Qg) and low on-resistance (R DS(on)) down to 250 mΩ (at 900 V) in the TO-220 and 900 mΩ (at 1500 V) in the TO-247.These high voltage super-junction power MOSFETs belong to the STPOWER family. Specific voltages available include 800 V, 850 V, 900 V, 950 V, 1000 V. Included 800V MOSFET BM2P074KF-G General The PWM type DC/DC converter (BM2P074KF-G) for AC/DC provide an optimum system for all products that include an electrical outlet. BM2P074KF-G supports both isolated and non-isolated devices, enabling simpler design of various types of low-power electrical converters.
800V CoolMOS™ CE is Infineon's high performance device family offering 800V break down voltage. Designed according to the revolutionary superjunction (SJ) principle, it provides all benefits of a fast switching SJ MOSFET while not sacrificing ease-of-use.
Mosfet 800v 20a
The 800V CE selection series specifically aims at LED applications, complementing the 500VCoolMOS™ CE and 600V/650V CoolMOS™ CE families, which target consumer electronics applications and lighting. With this specific CoolMOS™ CE family, Infineon combines long experience as the leading SJ MOSFET supplier with best-in-class innovation.
The low RDS(on) enables low conduction and switching losses. In addition it makes switching applications more efficient, more compact, lighter and cooler. In the growing LED market 800V CoolMOS™ CE offers an outstanding price/performance ratio providing a competitive edge while being optimized for ease of use and efficiency in such applications.
This is one of the MOSFET types. This is a kind of the transistor.
Part Number : STF3NK80Z
Marking : F3NK80Z
Description : N-CHANNEL Power MOSFET ( N-channel 800V – 3.8Ω- 2.5A )
Package : TO-220FP Type
Manufactures : STMicroelectronics
Image
Features
1. Extremely high dv/dt capability
2. 100% avalanche tested
3. Gate charge minimized
4. Very low intrinsic capacitances
5. Very good manufacturing repeatibility
Pinout
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage : VDSS = 800 V
2. Gate to source voltage : VGSS = ± 30 V Man vs wild dublado torrent download.
Description
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
Telugu baby names book pdf free download. Applications
1. Switching applications
800v Mosfet N-channel
F3NK80Z Datasheet